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document number: 94505 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-mar-10 1 "full bridge" igbt mtp (u ltrafast npt igbt), 40 a 20MT120UFP vishay high power products features ? ultrafast non punch through (npt) technology ?positive v ce(on) temperature coefficient ? 10 s short circuit capability ?hexfred ? antiparallel diodes with ultrasoft reverse recovery ? low diode v f ? square rbsoa ? aluminum nitride dbc ? very low stray inductance desi gn for high speed operation ? ul approved file e78996 ? speed 8 khz to 60 khz ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level benefits ? optimized for welding, ups and smps applications ? rugged with ultrafast performance ? outstanding zvs and hard switching operation ? low emi, requires less snubbing ? excellent current sharing in parallel operation ? direct mounting to heatsink ? pcb solderable terminals ? very low junction to case thermal resistance product summary v ces 1200 v i c at t c = 25 c 40 a v ce(on) 3.29 v mtp absolute maximum ratings parameter symbol test conditions max. units collector to emitte r breakdown voltage v ces 1200 v continuous coll ector current i c t c = 25 c 40 a t c = 106 c 20 pulsed collector current i cm 100 clamped inductive load current i lm 100 diode continuous forward current i f t c = 106 c 25 diode maximum forward current i fm 100 gate to emitter voltage v ge 20 v rms isolation voltage v isol any terminal to case, t = 1 minute 2500 maximum power dissipation (only igbt) p d t c = 25 c 240 w t c = 100 c 96
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94505 2 revision: 01-mar-10 20MT120UFP vishay high power products "full bridge" igbt mtp (ultrafast npt igbt), 40 a note (1) i ces includes also opposite leg overall leakage electrical specifications (t j = 25 c unless otherwise noted) parameter symbol test condition s min. typ. max. units collector to emitte r breakdown voltage v (br)ces v ge = 0 v, i c = 250 a 1200 - - v temperature coefficient of breakdown voltage v (br)ces / t j v ge = 0 v, i c = 3 ma (25 c to 125 c) - + 1.3 - v/c collector to emitter satura tion voltage v ce(on) v ge = 15 v, i c = 20 a - 3.29 3.59 v v ge = 15 v, i c = 40 a - 4.42 4.66 v ge = 15 v, i c = 20 a, t j = 125 c - 3.87 4.11 v ge = 15 v, i c = 40 a, t j = 125 c - 5.32 5.70 v ge = 15 v, i c = 20 a, t j = 150 c - 3.99 4.27 gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 4 - 6 temperature coefficient of threshold voltage v ge(th) / t j v ce = v ge , i c = 3 ma (25 c to 125 c) - - 14 - mv/c transconductance g fe v ce = 50 v, i c = 20 a, pw = 80 s - 17.5 - s zero gate voltage collector current i ces (1) v ge = 0 v, v ce = 1200 v, t j = 25 c - - 250 a v ge = 0 v, v ce = 1200 v, t j = 125 c - 0.7 3.0 ma v ge = 0 v, v ce = 1200 v, t j = 150 c - 2.9 9.0 gate to emitter leakage current i ges v ge = 20 v - - 250 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units total gate charge (turn-on) q g i c = 20 a v cc = 600 v v ge = 15 v - 176 264 nc gate to emitter charge (turn-on) q ge -1930 gate to collector charge (turn-on) q gc - 89 134 turn-on switching loss e on v cc = 600 v, i c = 20 a, v ge = 15 v, r g = 5 , l = 1 mh, t j = 25 c, energy losses include tail and diode reverse recovery -0.92- mj turn-off switching loss e off -0.46- total switching loss e tot -1.38- turn-on switching loss e on v cc = 600 v, i c = 20 a, v ge = 15 v, r g = 5 , l = 1 mh, t j = 125 c, energy losses include tail and diode reverse recovery -1.29- turn-off switching loss e off -0.81- total switching loss e tot -2.1- input capacitance c ies v ge = 0 v v cc = 30 v f = 1.0 mhz - 2530 3790 pf output capacitance c oes - 344 516 reverse transfer capacitance c res - 78 117 reverse bias safe operating area rbsoa t j = 150 c, i c = 120 a v cc = 1000 v, v p = 1200 v r g = 5 , v ge = + 15 v to 0 v fullsquare short circuit safe operating area scsoa t j = 150 c v cc = 900 v, v p = 1200 v r g = 5 , v ge = + 15 v to 0 v 10 - - s
document number: 94505 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-mar-10 3 20MT120UFP "full bridge" igbt mtp (ultrafast npt igbt), 40 a vishay high power products diode specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units diode forward voltage drop v fm i c = 20 a - 2.48 2.94 v i c = 40 a - 3.28 3.90 i c = 20 a, t j = 125 c - 2.44 2.84 i c = 40 a, t j = 125 c - 3.45 4.14 i c = 20 a, t j = 150 c - 2.21 2.93 reverse recovery energy of the diode e rec v ge = 15 v, r g = 5 , l = 200 h v cc = 600 v, i c = 20 a t j = 125 c - 420 630 j diode reverse recovery time t rr - 98 150 ns peak reverse recovery current i rr -3350a thermal and mechanical specifications parameter symbol test conditions min. typ. max. units operating junction temperature range t j - 40 - 150 c storage temperature range t stg - 40 - 125 junction to case igbt r thjc - 0.35 0.52 c/w diode - 0.40 0.61 case to sink per module r thcs heatsink compound thermal conductivity = 1 w/mk - 0.06 - clearance external shortest distance in air between 2 terminals 5.5 - - mm creepage shortest distance along external surface of the insulating material between 2 terminals 8-- mounting torque a mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. lubricated threads. 3 10 % nm weight 66 g
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94505 4 revision: 01-mar-10 20MT120UFP vishay high power products "full bridge" igbt mtp (ultrafast npt igbt), 40 a fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25 c; t j 150 c fig. 4 - reverse bias soa t j = 150 c; v ge = 15 v fig. 5 - typical igbt output characteristics t j = - 40 c; t p = 80 s fig. 6 - typical igbt output characteristics t j = 25 c; t p = 80 s 0 20 40 60 80 100 120 140 160 t c (c) 0 10 20 30 40 50 i c ) a ( 0 20 40 60 80 100 120 140 160 t c (c) 0 50 100 150 200 250 p t o t ) w ( 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 i c ) a ( 10 s 100 s 1ms dc v ce (v) 10 100 1000 10 000 v ce (v) 1 10 100 1000 i c ) a ( 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i e c ) a ( v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 2 4 6 8 10 v ce (v ) 0 20 40 60 80 100 i e c ) a ( v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v
document number: 94505 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-mar-10 5 20MT120UFP "full bridge" igbt mtp (ultrafast npt igbt), 40 a vishay high power products fig. 7 - typical igbt output characteristics t j = 125 c; t p = 80 s fig. 8 - typical diode forward characteristics t p = 80 s fig. 9 - typical v ce vs. v ge t j = - 40 c fig. 10 - typical v ce vs. v ge t j = 25 c fig. 11 - typical v ce vs. v ge t j = 125 c fig. 12 - typical transfer characteristics v ce = 50 v; t p = 10 s 0246810 v ce (v ) 0 20 40 60 80 100 i e c ) a ( v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0.0 1.0 2.0 3.0 4.0 5.0 v(v) 0 20 40 60 80 100 120 i f f ) a ( -40c 25c 125c 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v e c ) v ( i ce = 40a i ce = 20a i ce = 10a 5 10 15 20 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v e c ) v ( i ce = 10a i ce = 20a i ce = 40a 5 10 15 20 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v e c (v) i ce = 10a i ce = 20a i ce = 40a 0 5 10 15 20 v ge (v) 0 50 100 150 200 250 300 i e c ) a ( t j = 25c t j = 150c
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94505 6 revision: 01-mar-10 20MT120UFP vishay high power products "full bridge" igbt mtp (ultrafast npt igbt), 40 a fig. 13 - typical energy loss vs. i c t j = 125 c; l = 1 mh; v cc = 600 v r g = 5 ; v ge = 15 v fig. 14 - typical switching time vs. i c t j = 125 c; l = 1 mh; v cc = 600 v r g = 5 ; v ge = 15 v fig. 15 - typical energy loss vs. r g t j = 125 c; l = 1 mh; v cc = 600 v i ce = 6 a; v ge = 15 v fig. 16 - typical switching time vs. r g t j = 150 c; l = 1 mh; v cc = 600 v i ce = 6 a; v ge = 15 v fig. 17 - typical diode i rr vs. i f t j = 150 c fig. 18 - typical diode i rr vs. r g t j = 150 c; i f = 5.0 a 0 1020304050 0 0.5 1 1.5 2 2.5 eon eoff i c (a) energy (mj) 01020304050 1 10 100 1000 td (off) td (on) tr tf i c (a) switching time (ns) 0 1020304050 0.2 0.4 0.6 0.8 1 1.2 eon eoff energy (mj) r g ( ) 0 1020304050 1 10 100 1000 td (off) td (on) tr tf r g ( ) switching time (ns) 0 5 10 15 20 25 30 35 i f (a) 0 10 20 30 40 i r r ) a ( r g = 5.0 r g = 10 r g = 30 r g = 50 0 10 20 30 40 50 60 r g ( ) 0 10 20 30 40 i r r ) a (
document number: 94505 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-mar-10 7 20MT120UFP "full bridge" igbt mtp (ultrafast npt igbt), 40 a vishay high power products fig. 19 - typical diode i rr vs. di f /dt v cc = 400 v; v ge = 15 v; i ce = 5.0 a; t j = 150 c fig. 20 - typical diode q rr vs. di f /dt v cc = 400 v; v ge = 15 v; t j = 150 c fig. 21 - typical capacitance vs. v ce v ge = 0 v; f = 1 mhz fig. 22 - typical gate charge vs. v ge i ce = 5.0 a; l = 600 h fig. 23 - maximum transient thermal impedance, junction to case (igbt) 0 200 400 600 800 1000 di f /dt (a/s) 10 15 20 25 30 35 40 i r r ) a ( 0 200 400 600 800 1000 1200 di f /dt (a/s) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 q r r ) c ( 5.0 30 10 50 30a 20a 10a 0 20 40 60 80 100 v ce (v ) 10 100 1000 10000 ) f p ( e c n a t i c a p a c cies coes cres 0 40 80 120 160 200 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v e g ) v ( 600v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 z ( e s n o p s e r l a m r e h t c j h t ) 0.20 0.10 d = 0.50 0.01 0.02 0.05 single pulse ( therma l res pons e ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthj c + tc ri (c/w) i (sec) 0.161 0.000759 0.210 0.017991 0.147 0.06094 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i/ri
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94505 8 revision: 01-mar-10 20MT120UFP vishay high power products "full bridge" igbt mtp (ultrafast npt igbt), 40 a fig. 24 - maximum transient thermal impedance, junction to case (diode) fig. ct.1 - gate ch arge circuit (turn-off) fig. ct.2 - rbsoa circuit fig. ct.3 - s.c. soa circuit fig. ct.4 - switching loss circuit 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rec tangul ar p ul s e durati on (s ec ) 0.0001 0.001 0.01 0.1 1 z ( e s n o p s e r l a m r e h t c j h t ) 0.20 0.10 d = 0.50 0.01 0.02 0.05 single pulse ( the rmal re sp ons e ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.238 0.001017 0.312 0.033081 0.061 0.77744 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i/ri 1 k v cc d.u.t. 0 l + - l r g 80 v d.u.t 1000 v + - d c driver d.u.t. 900 v + - l r g v cc diode clamp/ d.u.t. d.u.t./ driver - 5 v - + + -
document number: 94505 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-mar-10 9 20MT120UFP "full bridge" igbt mtp (ultrafast npt igbt), 40 a vishay high power products fig. 25 - electrical diagram ordering information table circuit configuration 9, 10 4 3 5 6 15, 16 7 8 11, 12 13, 14 2 1 1 2 3 4 5 6 - p = lead (pb)-free - current rating (20 = 20 a) - essential part number - voltage code (120 = 1200 v) - speed/type (u = ultrafast igbt) - circuit configuration (f = full bridge) device code 5 13 24 6 20 mt 120 u f p links to related documents dimensions www.vishay.com/doc?95245
document number: 95245 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 24-sep-08 1 mtp mosfet/igbt full-bridge outline dimensions vishay semiconductors dimensions in millimeters ? 5 ? 1.1 12 0.5 4 20.5 2.5 31.8 33 41 32 13 14 11 12 9 10 5 6 15 16 7 8 r5.75 (x 2) 27.5 11.4 0.1 11.3 0.1 ? 5.2 x 3 3 0.1 8 0.1 0.3 0.1 7 6.6 0.1 7.4 0.1 3 0.1 5.3 0.1 5.3 0.1 45 0.6 x h1.2 63.5 0.25 48.7 44.5 39.5 6.6 0.1 7.4 0.1 4.9 0.1 8 0.1 1.3 7 0.1
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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